Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F21%3A00544608" target="_blank" >RIV/61388955:_____/21:00544608 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/11104/0321442" target="_blank" >http://hdl.handle.net/11104/0321442</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.carbon.2021.07.098" target="_blank" >10.1016/j.carbon.2021.07.098</a>

Result language
angličtina
Original language name
Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC
Original language description
Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H–SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H–SiC-based device that enables us to observe the positive photoresponse for (405–532) nm and negative photoresponse for (632–980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry

Project
<a href="/en/project/GX20-08633X" target="_blank" >GX20-08633X: ÅrchitectRonics of Two-dimensional crystals via synergy of chiral electro-chemical and opto-electronic concepts on Å-scale</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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