Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F25%3A00619388" target="_blank" >RIV/61388955:_____/25:00619388 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/25:10497960 RIV/60461373:22310/25:43932135 RIV/60461373:22340/25:43932135
Result on the web
<a href="https://hdl.handle.net/11104/0366123" target="_blank" >https://hdl.handle.net/11104/0366123</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsami.5c01924" target="_blank" >10.1021/acsami.5c01924</a>
Alternative languages
Result language
angličtina
Original language name
Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr
Original language description
Monolayers of semiconducting transition metal dichalcogenides (TMDCs) are known for their unique excitonic photoluminescence (PL), which can be tuned by interfacing them with other materials. However, integrating TMDCs into van der Waals heterostructures often results in a significant quenching of the PL because of an increased rate of nonradiative recombination processes. We demonstrate a wide-range tuning of the PL intensity of monolayer MoS2 interfaced with another layered semiconductor, CrSBr. We discover that a thin CrSBr up to approximate to 20 nm in thickness enhances the PL of MoS2, while a thicker material causes PL quenching, which is associated with changes in the excitonic makeup driven by the charge redistribution in the CrSBr/MoS2 heterostructure. Transport measurements, Kelvin probe force microscopy, and first-principles calculations indicate that this charge redistribution most likely causes n- to p-type doping transition of MoS2 upon contact with CrSBr, facilitated by the type II band alignment and the tendency of CrSBr to act as an electron sink. Furthermore, we fabricate an efficient AC-regime photodetector with a responsivity of 10(5) A/W from a MoS2/CrSBr heterostructure.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Applied Materials and Interfaces
ISSN
1944-8244
e-ISSN
1944-8252
Volume of the periodical
17
Issue of the periodical within the volume
17
Country of publishing house
US - UNITED STATES
Number of pages
9
Pages from-to
25693-25701
UT code for WoS article
001468413600001
EID of the result in the Scopus database
2-s2.0-105004049535