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Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F25%3A00619388" target="_blank" >RIV/61388955:_____/25:00619388 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216208:11320/25:10497960 RIV/60461373:22310/25:43932135 RIV/60461373:22340/25:43932135

  • Result on the web

    <a href="https://hdl.handle.net/11104/0366123" target="_blank" >https://hdl.handle.net/11104/0366123</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1021/acsami.5c01924" target="_blank" >10.1021/acsami.5c01924</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

  • Original language description

    Monolayers of semiconducting transition metal dichalcogenides (TMDCs) are known for their unique excitonic photoluminescence (PL), which can be tuned by interfacing them with other materials. However, integrating TMDCs into van der Waals heterostructures often results in a significant quenching of the PL because of an increased rate of nonradiative recombination processes. We demonstrate a wide-range tuning of the PL intensity of monolayer MoS2 interfaced with another layered semiconductor, CrSBr. We discover that a thin CrSBr up to approximate to 20 nm in thickness enhances the PL of MoS2, while a thicker material causes PL quenching, which is associated with changes in the excitonic makeup driven by the charge redistribution in the CrSBr/MoS2 heterostructure. Transport measurements, Kelvin probe force microscopy, and first-principles calculations indicate that this charge redistribution most likely causes n- to p-type doping transition of MoS2 upon contact with CrSBr, facilitated by the type II band alignment and the tendency of CrSBr to act as an electron sink. Furthermore, we fabricate an efficient AC-regime photodetector with a responsivity of 10(5) A/W from a MoS2/CrSBr heterostructure.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10403 - Physical chemistry

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    ACS Applied Materials and Interfaces

  • ISSN

    1944-8244

  • e-ISSN

    1944-8252

  • Volume of the periodical

    17

  • Issue of the periodical within the volume

    17

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    25693-25701

  • UT code for WoS article

    001468413600001

  • EID of the result in the Scopus database

    2-s2.0-105004049535