Data for Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F26%3A00647052" target="_blank" >RIV/61388955:_____/26:00647052 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Data for Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr

Original language description

This dataset supports the published article " Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr." In this work, we present a method for modulating the photoluminescence (PL) of monolayer (1L) MoS2 through its interaction with the semiconductor CrSBr. We find that CrSBr layers up to 18 nm thick enhance MoS2 PL, while thicker flakes tend to quench it. This behavior is attributed to an n- to p-doping transition in MoS2, driven by charge transfer in a type-II band alignment. Our findings are supported by first-principles calculations, transport measurements, Kelvin probe force microscopy, and time-resolved PL spectroscopy. Additionally, we fabricate a lateral CrSBr/MoS2 photodetector operating in the AC regime, achieving a responsivity of 105 A/W.

Czech name

—

Czech description

—

Type

X - Unclassified

CEP classification

—

OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2026

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů