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A triradical-containing trinuclear Pd(II) complex: spin-polarized electronic transmission, analog resistive switching and neuromorphic advancements

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F25%3A00600736" target="_blank" >RIV/61388963:_____/25:00600736 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1039/D4MH00928B" target="_blank" >https://doi.org/10.1039/D4MH00928B</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1039/d4mh00928b" target="_blank" >10.1039/d4mh00928b</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    A triradical-containing trinuclear Pd(II) complex: spin-polarized electronic transmission, analog resistive switching and neuromorphic advancements

  • Original language description

    Neuromorphic computation has emerged as a potential alternative to subvert the von Neumann bottleneck issue in conventional computing. In this context, the development of resistive switching-based memristor devices mimicking various synaptic functionalities has engendered paramount attention. Here, we report a triradical-containing trinuclear Pd(ii) cluster with a cyclohexane-like framework constituted by the Pd-Se coordination motif displaying facile memristor property with neuromorphic functionality as a thin-film device. The metal-ligand complex (complex 1) possessed an St = 1/2 ground state by experiencing a spin-frustrated-type magnetic coupling phenomenon amongst the three ligand-based organic radicals (SR = 1/2), coordinated to the Pd(ii) ions. Three reversible one-electron reduction waves countered with a one-electron and one two-electron reversible oxidation waves were noticed in the cyclic voltammogram of the complex, confirming electrons accepting and releasing capacity of the complex at low potentials, i.e., within +0.2 V to1.1 V. Employing the radical-containing complex 1 as the active thin-film sandwiched between two orthogonal electrodes, resistive switching based memristor property with biological synaptic actions were successfully emulated. Intriguingly, the artificial neural network (ANN) simulated efficient pattern recognition demonstrated using the recorded potentiation and depression curves from the device, which is a step ahead for the hardware realization of neuromorphic computing. The performance of the ANN on MNIST data with reduced image resolution has further been evaluated. Density functional theory (DFT)-based theoretical calculation predicted that the spin-polarized electronic transmission substantiated the memristive property in the neutral complex 1.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10403 - Physical chemistry

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2025

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Horizons

  • ISSN

    2051-6347

  • e-ISSN

    2051-6355

  • Volume of the periodical

    12

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    12

  • Pages from-to

    246-257

  • UT code for WoS article

    001344117200001

  • EID of the result in the Scopus database

    2-s2.0-85207472918