Artificial Synaptic Memristor Based on Ag-ChG Material

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985891%3A_____%2F25%3A00641220" target="_blank" >RIV/67985891:_____/25:00641220 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22310/25:43933324
Result on the web
<a href="https://doi.org/10.1109/MIEL66332.2025.11261177" target="_blank" >https://doi.org/10.1109/MIEL66332.2025.11261177</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/MIEL66332.2025.11261177" target="_blank" >10.1109/MIEL66332.2025.11261177</a>

Result language
angličtina
Original language name
Artificial Synaptic Memristor Based on Ag-ChG Material
Original language description
In this paper, the artificial synaptic memristor based on the chalcogenide doped with silver (Ag-ChG) was investigated from the standpoint of its potential application in neuromorphic systems. Preparation of the Ag-ChG material was carried out using melt-quenching technique, and its morphological properties were analysed by using scanning electron microscopy (SEM). Biological synaptic properties of memristor such as synaptic weight and short-term plasticity were studied together with its memristive characteristics. Namely, the current-voltage characteristics of artificial synaptic memristor based on Ag-ChG material were experimentally determined at several voltage biases using different voltage sweeps. When applying several consecutive voltage sweeps, the obtained results showed that synaptic memristor exhibits a typical short-term depression and short-term potentiation. In addition, the observed increase in the synaptic weight could be attributed to strengthening the connection between two artificial neurons, when it would be realized by using the memristor based on the Ag-ChG material.n
Czech name
—
Czech description
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Project
<a href="/en/project/GA25-15635S" target="_blank" >GA25-15635S: Photoinduced effects in glasses transmitting infrared radiation</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings 2025 IEEE 34th International Conference on Microelectronics
ISBN
979-8-3315-1417-4
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
287-290
Publisher name
Institute of electical and electronics engineers
Place of publication
Danvers
Event location
Niš
Event date
Oct 13, 2025
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
001661593600054

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