Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F13%3A00392531" target="_blank" >RIV/61389005:_____/13:00392531 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21670/13:00215465
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/8/04/C04001" target="_blank" >http://dx.doi.org/10.1088/1748-0221/8/04/C04001</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/8/04/C04001" target="_blank" >10.1088/1748-0221/8/04/C04001</a>

Result language
angličtina
Original language name
Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip
Original language description
Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10(12) particles/cm(2))of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the d
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BG - Nuclear, atomic and molecular physics, accelerators
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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