3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F13%3A00215514" target="_blank" >RIV/68407700:21670/13:00215514 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/13:00392289
Result on the web
<a href="http://iopscience.iop.org/1748-0221/8/03/C03023/" target="_blank" >http://iopscience.iop.org/1748-0221/8/03/C03023/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/8/03/C03023" target="_blank" >10.1088/1748-0221/8/03/C03023</a>

Result language
angličtina
Original language name
3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency
Original language description
Radiation damage in semiconductor sensors alters the response and degrades the performance of many devices ultimately limiting their stability and lifetime. In semiconductor radiation detectors the homogeneity of charge collection becomes distorted whiledecreasing the overall detection efficiency. Moreover the damage can significantly increase the detector noise and degrade other electrical properties such as leakage current. In this work we present a novel method for 3D mapping of the semiconductor radiation sensor volume allowing displaying the three dimensional distribution of detector properties such as charge collection efficiency and charge diffusion rate. This technique can visualize the spatially localized changes of local detector performanceafter radiation damage. Sensors used were 300 mu m and 1000 mu m thick silicon bump-bonded to a Timepix readout chip which serves as an imaging multichannel microprobe (256 x 256 square pixels with pitch of 55 mu m, i.e. all together 65
Czech name
—
Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BG - Nuclear, atomic and molecular physics, accelerators
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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