Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F18%3A00496726" target="_blank" >RIV/61389005:_____/18:00496726 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/18:00496726
Result on the web
<a href="http://dx.doi.org/10.1002/sia.6492" target="_blank" >http://dx.doi.org/10.1002/sia.6492</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/sia.6492" target="_blank" >10.1002/sia.6492</a>
Alternative languages
Result language
angličtina
Original language name
Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions
Original language description
Structural modification after medium-heavy ion irradiation was characterised by Rutherford backscattering spectrometry in the channelling mode (RBS-C) for silicon-on-insulator (SOI) material. Silicon on insulator was irradiated using C+, 2(+), N+, 2(+), and O+, 2(+) ions at fluences of 1 x 10(14) and 1 x 10(15) cm(-2) and energies of 0.4, 3, and 5 MeV to follow the interplay of electronic and nuclear stopping and its influence on damage accumulation. The relative amount of displaced atoms in the surface-irradiated layer was extracted from RBS-C spectra and used, along with axial channel analysis, to study ion-channelling effects in the modified crystalline lattice. The discussion of ion penetration through the modified crystalline layer of the SOI structure in channelling direction was supported by a Monte Carlo simulation (FLUX code) of He ion flux maps in a gradually modified Si crystalline upper layer taking into account the experimentally determined relative disorder extracted from RBS-C. nnThe RBS-C measurement shows an increase of the relative amount of displaced atoms mainly after irradiation using 0.4-MeV ions at an ion fluence of 1 x 10(15) cm(-2). The narrowing effect of channels for He ion-beam channelling experiment was observed in the irradiated silicon layers and discussed in connection with the irradiation parameters. The FLUX simulation, provided with the experimentally given value of the displaced atoms, has confirmed that it is not only the vacancies that can cause such a narrowing effect of the angular scan. The angular scan narrowing can be explained for predominately electronic stopping by induced crystalline-cell modification.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10304 - Nuclear physics
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Surface and Interface Analysis
ISSN
0142-2421
e-ISSN
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Volume of the periodical
50
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
1243-1249
UT code for WoS article
000448889600049
EID of the result in the Scopus database
2-s2.0-85050581054