Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00508842" target="_blank" >RIV/61389005:_____/19:00508842 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/19:10398928
Result on the web
<a href="https://doi.org/10.1002/sia.6698" target="_blank" >https://doi.org/10.1002/sia.6698</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/sia.6698" target="_blank" >10.1002/sia.6698</a>
Alternative languages
Result language
angličtina
Original language name
Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions
Original language description
A Si crystal layer on SiO2/Si was implanted using 0.4-MeV Kr+, Ag+, and Au+ at ion fluences of 0.5 x 10(15) to 5.0 x 10(15) cm(-2). Subsequent annealing was performed at temperatures of 450 degrees and 800 degrees for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena. Therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He+ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10304 - Nuclear physics
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Surface and Interface Analysis
ISSN
0142-2421
e-ISSN
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Volume of the periodical
51
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
1113-1120
UT code for WoS article
000484715100001
EID of the result in the Scopus database
2-s2.0-85071871905