Monitoring of the plasma generated by a gas-puff target source

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00505086" target="_blank" >RIV/61389005:_____/19:00505086 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1103/PhysRevAccelBeams.22.052901" target="_blank" >https://doi.org/10.1103/PhysRevAccelBeams.22.052901</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevAccelBeams.22.052901" target="_blank" >10.1103/PhysRevAccelBeams.22.052901</a>

Result language
angličtina
Original language name
Monitoring of the plasma generated by a gas-puff target source
Original language description
A 10-Hz repetition rate, Nd:YAG pulsed laser (lambda = 1064 nm, pulse energy of 0.69 J, pulse duration of 3 ns) irradiated a Xe double-stream gas-puff target source. The interaction gives rise to the formation of plasma and emission of soft x-ray and extreme ultraviolet radiation. The produced plasma was investigated and characterized by a silicon carbide (SiC) and a commercial silicon (Si) detector, applying different spectral filters. Some parameters such as the plasma stability and its evolution (time trace profile and pulse time duration) are presented and discussed, evidencing pros and cons of the employment of SiC detectors with respect to the traditional Si for laser-generated plasma diagnostic.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10304 - Nuclear physics

Project
<a href="/en/project/GA19-02804S" target="_blank" >GA19-02804S: Nanostructured heterojunctions for chemiresistors</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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