Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F20%3A00534005" target="_blank" >RIV/61389005:_____/20:00534005 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/20:00534005
Result on the web
<a href="https://doi.org/10.1080/10426507.2020.1804166" target="_blank" >https://doi.org/10.1080/10426507.2020.1804166</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1080/10426507.2020.1804166" target="_blank" >10.1080/10426507.2020.1804166</a>
Alternative languages
Result language
angličtina
Original language name
Multilayered Cu-Ti deposition on silicon substrates for chemiresistor applications
Original language description
On the perspective to develop CuO-TiO2MOS, multilayered Cu and Ti thin layers were alternatively deposited on silicon wafers using 25 keV Ar + ion beam sputtering and, subsequently, oxidized by thermal annealing in air at 400 degrees C for 24 h. The deposited films have variable ratios of the Cu and Ti % at. One of the main goal is to obtain such multilayers avoiding the presence of Cu-Ti-O compounds. The samples were characterized in terms of composition (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations). In particular, SIMS maps allows to observe the spatial distribution and thickness of each phase of the Cu/Ti multilayers, and further to observe Cu diffusion and mixing with Ti, as well as phase separation of CuO and TiO(2)in the samples. The reasons of this effect represent an open issue that has to investigated, in order to improve the MOS fabrication.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Phosphorus, Sulfur and Silicon and the Related Elements
ISSN
1042-6507
e-ISSN
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Volume of the periodical
195
Issue of the periodical within the volume
11
Country of publishing house
GB - UNITED KINGDOM
Number of pages
4
Pages from-to
932-935
UT code for WoS article
000572478600011
EID of the result in the Scopus database
2-s2.0-85091489645