Synthesis of Cu-Ti thin film multilayers on silicon substrates
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F21%3A00541428" target="_blank" >RIV/61389005:_____/21:00541428 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/21:00541428
Result on the web
<a href="https://doi.org/10.1007/s12034-020-02346-6" target="_blank" >https://doi.org/10.1007/s12034-020-02346-6</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s12034-020-02346-6" target="_blank" >10.1007/s12034-020-02346-6</a>
Alternative languages
Result language
angličtina
Original language name
Synthesis of Cu-Ti thin film multilayers on silicon substrates
Original language description
Metal-oxide-based sensors (MOS) can be used for several technological applications in microelectronics, due to their low cost and sensitive capabilities to different chemical species. On the perspective to develop CuO-TiO2 MOS, our goal was to obtain a homogeneous intermixing of Cu and Ti in the bulk structure of the detectors, exploring the most promising combination between such elements and avoiding the presence of Cu-Ti-O compounds. To do that, several Cu and Ti thin layers were alternatively deposited by Ar+ sputtering on silicon wafers and, subsequently, oxidized by thermal annealing. The obtained samples were characterized in terms of %at. Cu-Ti ratios (by RBS and SIMS analyses) and morphology (by AFM and SEM investigations), showing the abundance ratios of such elements in the whole structure. In particular, SIMS maps allowed to study the spatial distribution and thickness of each phase of the Cu-Ti multilayers and further to observe the Cu diffusion and the mixing with Ti, as well as phase separation of CuO and TiO2 in the samples. This unwanted effect represents an open issue that has to be investigated, in order to improve the MOS fabrication.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/GA19-02804S" target="_blank" >GA19-02804S: Nanostructured heterojunctions for chemiresistors</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Bulletin of Materials Science
ISSN
0250-4707
e-ISSN
0973-7669
Volume of the periodical
44
Issue of the periodical within the volume
1
Country of publishing house
IN - INDIA
Number of pages
8
Pages from-to
50
UT code for WoS article
000621448300001
EID of the result in the Scopus database
2-s2.0-85101679529