Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F22%3A00557036" target="_blank" >RIV/61389005:_____/22:00557036 - isvavai.cz</a>
Alternative codes found
RIV/44555601:13440/22:43897482
Result on the web
<a href="https://doi.org/10.1063/5.0083858" target="_blank" >https://doi.org/10.1063/5.0083858</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/5.0083858" target="_blank" >10.1063/5.0083858</a>
Alternative languages
Result language
angličtina
Original language name
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
Original language description
Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (beta-Ga2O3) wafers, having ((2) over bar 01), (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV Si-28(+)-ions, applying fluences in the range of 1 x 10(14)-2 x 10(16) Si/cm(2), unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted beta-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having ((2) over bar 01 ) orientation were subjected to isochronal (30 min) anneals in the range of 300-1300 degrees C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 x 10(16) Si/cm(2) and annealed at 1100 degrees C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Result continuities
Project
<a href="/en/project/EF16_013%2F0001812" target="_blank" >EF16_013/0001812: Center of Accelerators and Nuclear Analytical Methods - OP</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
1089-7550
Volume of the periodical
131
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
125701
UT code for WoS article
000779491400010
EID of the result in the Scopus database
2-s2.0-85127357239