SiC Measurements of Electron Energy by fs Laser Irradiation of Thin Foils

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F23%3A00572184" target="_blank" >RIV/61389005:_____/23:00572184 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.3390/mi14040811" target="_blank" >https://doi.org/10.3390/mi14040811</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/mi14040811" target="_blank" >10.3390/mi14040811</a>

Result language

angličtina

Original language name

SiC Measurements of Electron Energy by fs Laser Irradiation of Thin Foils

Original language description

SiC detectors based on a Schottky junction represent useful devices to characterize fast laser-generated plasmas. High-intensity fs lasers have been used to irradiate thin foils and to characterize the produced accelerated electrons and ions in the target normal sheath acceleration (TNSA) regime, detecting their emission in the forward direction and at different angles with respect to the normal to the target surface. The electrons' energies have been measured using relativistic relationships applied to their velocity measured by SiC detectors in the time-of-flight (TOF) approach. In view of their high energy resolution, high energy gap, low leakage current, and high response velocity, SiC detectors reveal UV and X-rays, electrons, and ions emitted from the generated laser plasma. The electron and ion emissions can be characterized by energy through the measure of the particle velocities with a limitation at electron relativistic energies since they proceed at a velocity near that of the speed of light and overlap the plasma photon detection. The crucial discrimination between electrons and protons, which are the fastest ions emitted from the plasma, can be well resolved using SiC diodes. Such detectors enable the monitoring of the high ion acceleration obtained using high laser contrast and the absence of ion acceleration using low laser contrast, as presented and discussed.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10304 - Nuclear physics

Project

<a href="/en/project/GA23-06702S" target="_blank" >GA23-06702S: Graphene oxide electronic structure modulation by intentional doping and defect introduction by ion beams for microelectronics, catalysts and sensors</a><br>

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Micromachines

ISSN

2072-666X

e-ISSN

2072-666X

Volume of the periodical

14

Issue of the periodical within the volume

4

Country of publishing house

CH - SWITZERLAND

Number of pages

11

Pages from-to

811

UT code for WoS article

000978648900001

EID of the result in the Scopus database

2-s2.0-85156142032