Amorphous Ge-Se thin films prepared by pulsed-laser deposition

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389013%3A_____%2F04%3A00107390" target="_blank" >RIV/61389013:_____/04:00107390 - isvavai.cz</a>

Alternative codes found

RIV/00216275:25310/04:00001530

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Amorphous Ge-Se thin films prepared by pulsed-laser deposition

Original language description

Amorphous GexSe1-x, x=0.22-0.28 thin films were prepared by the pulsed-laser deposition technique. The photo-induced and thermally induced changes of structure and optical gap of the films were studied and discussed.

Czech name

Amorfni Ge-Se tenké filmy připravené pulzní laserovou depozicí

Czech description

Pulzní laserovou depoziční technikou byly připraveny GexSe1-x, x=0.22-0.28 tenké filmy. Byly studovány fotoindukční a tepelně indukční změny struktury a optické šířky.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CA - Inorganic chemistry

OECD FORD branch

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Project

<a href="/en/project/LN00A028" target="_blank" >LN00A028: New inorganic compounds and advanced materials</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Philosophical Magazine

ISSN

1478-6435

e-ISSN

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Volume of the periodical

84

Issue of the periodical within the volume

9

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

9

Pages from-to

877-885

UT code for WoS article

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EID of the result in the Scopus database

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