X-ray induced damage of B4C-coated bilayer materials under various irradiation conditions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F19%3A00509786" target="_blank" >RIV/61389021:_____/19:00509786 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/19:00521099

Result on the web

<a href="https://www.nature.com/articles/s41598-019-38556-0" target="_blank" >https://www.nature.com/articles/s41598-019-38556-0</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41598-019-38556-0" target="_blank" >10.1038/s41598-019-38556-0</a>

Result language

angličtina

Original language name

X-ray induced damage of B4C-coated bilayer materials under various irradiation conditions

Original language description

In this report, we analyse X-ray induced damage of B4C-coated bilayer materials under various irradiation geometries, following the conditions of our experiment performed at the free-electron-laser facility SACLA. We start with the discussion of structural damage in solids and damage threshold doses for the experimental system components: B4C, SiC, Mo and Si. Later, we analyze the irradiation of the experimentally tested coated bilayer systems under two different incidence conditions of a linearly polarized X-ray pulse: (i) grazing incidence, and (ii) normal incidence, in order to compare quantitatively the effect of the pulse incidence on the radiation tolerance of both systems. For that purpose, we propose a simple theoretical model utilizing properties of hard X-ray propagation and absorption in irradiated materials and of the following electron transport. With this model, we overcome the bottleneck problem of large spatial scales, inaccessible for any existing first-principle-based simulation tools due to their computational limitations for large systems. Predictions for damage thresholds obtained with the model agree well with the available experimental data. In particular, they confirm that two coatings tested: 15 nm B4C/20 nm Mo on silicon wafer and 15 nm B4C/50 nm SiC on silicon wafer can sustain X-ray irradiation at the fluences up to similar to 10 mu J/mu m(2), when exposed to linearly polarized 10 keV X-ray pulse at a grazing incidence angle of 3 mrad. Below we present the corresponding theoretical analysis. Potential applications of our approach for design and radiation tolerance tests of multilayer components within X-ray free-electron-laser optics are indicated.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10306 - Optics (including laser optics and quantum optics)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Scientific Reports

ISSN

2045-2322

e-ISSN

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Volume of the periodical

9

Issue of the periodical within the volume

February

Country of publishing house

GB - UNITED KINGDOM

Number of pages

9

Pages from-to

2029

UT code for WoS article

000458619600029

EID of the result in the Scopus database

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