HIGH FREQUENCY MULTIPURPOSE SIC MOSFET DRIVER

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27240%2F21%3A10248237" target="_blank" >RIV/61989100:27240/21:10248237 - isvavai.cz</a>
Result on the web
<a href="http://advances.utc.sk/index.php/AEEE/article/view/4159" target="_blank" >http://advances.utc.sk/index.php/AEEE/article/view/4159</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.15598/aeee.v19i3.4159" target="_blank" >10.15598/aeee.v19i3.4159</a>

Result language
angličtina
Original language name
HIGH FREQUENCY MULTIPURPOSE SIC MOSFET DRIVER
Original language description
This article describes a new multipurpose Silicone-Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) driver, which was designed and manufactured for a high frequency operating SiC transistor as a semiconductor switching device of power converters. The design of the introduced driver enables to adjust the output voltage levels easily by choosing the integrated linear voltage stabilizers with suitable output parameters used for Printed Circuit Board (PCB) mounting. The voltage insulation of the proposed driver between the primary control side and the secondary output side is performed by MGJ6D12H24MC muRata Ps DC-DC converter with a declared dv/dt immunity 80 kV/1000 ms at 1.6 kV and by IX3180 IXYS High Speed gate driver optocouplers with a declared 10 kV/1000 ms minimum common mode rejection at 1.5 kV. The voltage insulation of these coupling elements is accompanied by safety gaps on the PCB. These insulation features enable the proposed driver to work on high frequencies as a high-side transistor of H-bridges as same as in other power converter topologies with a high frequency and high voltage stress of the insulation border. The proposed driver also provides the possibility of tripping the signal, when the short circuit of the controlled power transistor occurs.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Project
<a href="/en/project/LTE220001" target="_blank" >LTE220001: E-Town - Development of super-light, long-range small electric vehicles for intergenerational, urban e-mobility concepts powered by smart infrastructure</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2021
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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