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Theory and Original Design of Resistive-Inductive Network High-Pass Negative Group Delay Integrated Circuit in 130-nm CMOS Technology

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27240%2F22%3A10250105" target="_blank" >RIV/61989100:27240/22:10250105 - isvavai.cz</a>

  • Result on the web

    <a href="https://ieeexplore.ieee.org/document/9729790" target="_blank" >https://ieeexplore.ieee.org/document/9729790</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/ACCESS.2022.3157381" target="_blank" >10.1109/ACCESS.2022.3157381</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Theory and Original Design of Resistive-Inductive Network High-Pass Negative Group Delay Integrated Circuit in 130-nm CMOS Technology

  • Original language description

    This paper develops an original design method of high-pass (HP) negative group delay (NGD) integrated circuit (IC). The considered HP-NGD IC is based on a passive topology which is essentially composed of resistor-inductor (RL) network. The paper presents the first time that an unfamiliar HP-topology is designed in miniaturized circuit implemented in 130-nm CMOS technology. The theory of unfamiliar HP-NGD topology based on the voltage transfer function (VTF) analysis is elaborated. The design equations with synthesis formulas of the resistor and inductor are established. The HP-NGD IC CMOS design methodology is introduced. The feasibility of the miniature NGD IC implementation is approved by design rule check (DRC) and layout versus schematic (LVS) approaches. The HP-NGD passive IC is designed in 130-nm CMOS technology. The HP-NGD topology is constituted by RL-network based on CMOS high Ohmic unsalicided N + poly resistor and symmetrical high current spiral inductor. Then, the schematic and layout simulations are presented. The validity of the 130-nm CMOS HP-NGD design is verified by the investigation of 225 mu m x 215 mu m chip two different miniature circuit proofs-of-concept (POC). The HP-NGD behavior is validated by comparison between the calculated, and schematic and post-layout simulations of the HP-NGD POCs carried out by a commercial tool. As expected, the group delay and VTF magnitude diagrams are in very good correlation. HP-NGD optimal value, NGD cut-off frequency and attenuation, of about (-31 ps, 141 MHz, -3 dB) and (-47 ps, 204 MHz, -5 dB) are obtained from the miniature POCs.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20200 - Electrical engineering, Electronic engineering, Information engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2022

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    IEEE ACCESS

  • ISSN

    2169-3536

  • e-ISSN

    2169-3536

  • Volume of the periodical

    10

  • Issue of the periodical within the volume

    2022

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    15

  • Pages from-to

    27147-27161

  • UT code for WoS article

    000769966700001

  • EID of the result in the Scopus database