Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27240%2F22%3A10250737" target="_blank" >RIV/61989100:27240/22:10250737 - isvavai.cz</a>
Alternative codes found
RIV/61989100:27730/22:10250737
Result on the web
<a href="https://www.mdpi.com/2079-4991/12/22/4012" target="_blank" >https://www.mdpi.com/2079-4991/12/22/4012</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/nano12224012" target="_blank" >10.3390/nano12224012</a>
Alternative languages
Result language
angličtina
Original language name
Numerical Investigation of Photo-Generated Carrier Recombination Dynamics on the Device Characteristics for the Perovskite/Carbon Nitride Absorber-Layer Solar Cell
Original language description
The nitrogenated holey two-dimensional carbon nitride ((Formula presented.)) has been efficaciously utilized in the fabrication of transistors, sensors, and batteries in recent years, but lacks application in the photovoltaic industry. The (Formula presented.) possesses favorable optoelectronic properties. To investigate its potential feasibility for solar cells (as either an absorber layer/interface layer), we foremost detailed the numerical modeling of the double-absorber-layer-methyl ammonium lead iodide ((Formula presented.)) -carbon nitride ((Formula presented.)) layer solar cell and subsequently provided in-depth insight into the active-layer-associated recombination losses limiting the efficiency ((Formula presented.)) of the solar cell. Under the recombination kinetics phenomena, we explored the influence of radiative recombination, Auger recombination, Shockley Read Hall recombination, the energy distribution of defects, Band Tail recombination (Hoping Model), Gaussian distribution, and metastable defect states, including single-donor (0/+), single-acceptor (MINUS SIGN /0), double-donor (0/+/2+), double-acceptor (2/MINUS SIGN /0MINUS SIGN ), and the interface-layer defects on the output characteristics of the solar cell. Setting the defect (or trap) density to (Formula presented.) with a uniform energy distribution of defects for all layers, we achieved an (Formula presented.) of 24.16%. A considerable enhancement in power-conversion efficiency ((Formula presented.)) was perceived as we reduced the trap density to (Formula presented.) for the absorber layers. Furthermore, it was observed that, for the absorber layer with double-donor defect states, the active layer should be carefully synthesized to reduce crystal-order defects to keep the total defect density as low as (Formula presented.) to achieve efficient device characteristics.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20200 - Electrical engineering, Electronic engineering, Information engineering
Result continuities
Project
<a href="/en/project/TN01000007" target="_blank" >TN01000007: National Centre for Energy</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanomaterials
ISSN
2079-4991
e-ISSN
2079-4991
Volume of the periodical
12
Issue of the periodical within the volume
2022
Country of publishing house
CH - SWITZERLAND
Number of pages
14
Pages from-to
"nestrankováno"
UT code for WoS article
000887637200001
EID of the result in the Scopus database
2-s2.0-85142440637