Thin-Film Carbon Nitride (C2N)-Based Solar Cell Optimization Considering Zn1MINUS SIGN xMgxO as a Buffer Layer

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27240%2F23%3A10254576" target="_blank" >RIV/61989100:27240/23:10254576 - isvavai.cz</a>

Result on the web

<a href="https://www.mdpi.com/2227-9717/11/1/91" target="_blank" >https://www.mdpi.com/2227-9717/11/1/91</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/pr11010091" target="_blank" >10.3390/pr11010091</a>

Result language

angličtina

Original language name

Thin-Film Carbon Nitride (C2N)-Based Solar Cell Optimization Considering Zn1MINUS SIGN xMgxO as a Buffer Layer

Original language description

Carbon nitride (C2N), a two-dimensional material, is rapidly gaining popularity in the photovoltaic (PV) research community owing to its excellent properties, such as high thermal and chemical stability, non-toxic composition, and low fabrication cost over other thin-film solar cells. This study uses a detailed numerical investigation to explore the influence of C2N-based solar cells with zinc magnesium oxide (Zn1MINUS SIGN xMgxO) as a buffer layer. The SCAPS-1D simulator is utilized to examine the performance of four Mg-doped buffer layers (x = 0.0625, 0.125, 0.1875, and 0.25) coupled with the C2N-based absorber layer. The influence of the absorber and buffer layers&apos; band alignment, quantum efficiency, thickness, doping density, defect density, and operating temperature are analyzed to improve the cell performance. Based on the simulations, increasing the buffer layer Mg concentration above x = 0.1875 reduces the device performance. Furthermore, it is found that increasing the absorber layer thickness is desirable for good device efficiency, whereas a doping density above 1015 cmMINUS SIGN 3 can degrade the cell performance. After optimization of the buffer layer thickness and doping density at 40 nm and 1018 cmMINUS SIGN 3, the cell displayed its maximum performance. Among the four structures, C2N/Zn0.8125Mg0.1875O demonstrated the highest PCE of 19.01% with a significant improvement in open circuit voltage (Voc), short circuit density (Jsc), and fill factor (FF). The recorded results are in good agreement with the standard theoretical studies.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20200 - Electrical engineering, Electronic engineering, Information engineering

Project

—

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2023

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Processes

ISSN

2227-9717

e-ISSN

2227-9717

Volume of the periodical

11

Issue of the periodical within the volume

1

Country of publishing house

CH - SWITZERLAND

Number of pages

15

Pages from-to

"nečislovano"

UT code for WoS article

000918971200001

EID of the result in the Scopus database

2-s2.0-85146783910