Effects of nanowire size and geometry on silicon nanowire array thin film solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00489910" target="_blank" >RIV/68378271:_____/18:00489910 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1116/1.5010411" target="_blank" >http://dx.doi.org/10.1116/1.5010411</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1116/1.5010411" target="_blank" >10.1116/1.5010411</a>
Alternative languages
Result language
angličtina
Original language name
Effects of nanowire size and geometry on silicon nanowire array thin film solar cells
Original language description
We demonstrate the fabrication of Si nanowire array based solar cells consisting of c-Si cores and a-Si:H layers using a single pump-down PECVD. We investigate the influence of geometry, physical dimensions, and doping of the nanowire arrays on the solar cell performance. We show that the length and thickness of the nanowire radial NIP junction have a significant influence on the J-V characteristics and external quantum efficiency of the cells. The efficiency of cells is found to be mainly driven by the photogenerated current which is the largest when the thickness of the absorber film is approximately one half of the PIN nanowire length. Doping of the nanowires done by adding PH3 in situ in the PECVD lead to the nanowire axial and radial growth reduction at higher doping concentrations. The mechanism of light absorption, the crystallinity, and bulk and interface electrical losses for varying nanowire dimensions and amorphous layer thicknesses in the solar cells are discussed.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA16-12355S" target="_blank" >GA16-12355S: Silicon nanowires for three-dimensional nanoelectronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Vacuum Science & Technology B
ISSN
1071-1023
e-ISSN
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Volume of the periodical
36
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
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UT code for WoS article
000428278600017
EID of the result in the Scopus database
2-s2.0-85041321369