AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00432247" target="_blank" >RIV/68378271:_____/14:00432247 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions

Original language description

In this paper, we demonstrate the use of atomic force microscopy (AFM) with a conductive cantilever to study local electronic properties of silicon ­nanostructures: p-i-n radial junctions of amorphous Si grown on Si nanowires. We have observed variationsof the conductivity of the radial junction ­solar cells based on Si nanowires. Finally, we discuss possibilities of comparing the local photoresponse to local photovoltaic conversion efficiency.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

G.I.T. Imaging and Microscopy

ISSN

1439-4243

e-ISSN

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Volume of the periodical

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Issue of the periodical within the volume

1

Country of publishing house

DE - GERMANY

Number of pages

2

Pages from-to

52-53

UT code for WoS article

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EID of the result in the Scopus database

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