Enhancement of ferromagnetic properties in (Fe, Ni) co-doped ZnO flowers by pulsed magnetic field processing
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F19%3A10242118" target="_blank" >RIV/61989100:27360/19:10242118 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/content/pdf/10.1007/s10854-019-01138-x.pdf" target="_blank" >https://link.springer.com/content/pdf/10.1007/s10854-019-01138-x.pdf</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-019-01138-x" target="_blank" >10.1007/s10854-019-01138-x</a>
Alternative languages
Result language
angličtina
Original language name
Enhancement of ferromagnetic properties in (Fe, Ni) co-doped ZnO flowers by pulsed magnetic field processing
Original language description
In this study, Zn0.97Fe0.01Ni0.02O diluted magnetic semiconductor (DMS) flowers were fabricated through hydrothermal method with 4T (Tesla) pulsed magnetic field (PMF). Rietveld refinement of X-ray diffraction (XRD) patterns and Raman analysis indicated that the synthesized samples have the hexagonal wurtzite structure without any other secondary (impurity) phases. The O1s X-ray photoelectron spectroscopy (XPS) and Raman measurements of the synthesized samples showed the existence of oxygen vacancy (VO). The results indicated that PMF could increase the contents of VO and doped ions. The magnetic measurement showed that the room temperature ferromagnetic (RTFM) property of (Fe, Ni) co-doped ZnO is enhanced by PMF. The enhancement of RTFM is attributed to the intrinsic interaction of magnetic ions (Fe3+, Ni2+) via VO created by pulsed magnetic field processing.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
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Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Materials Science: Materials in Electronics
ISSN
0957-4522
e-ISSN
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Volume of the periodical
30
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
8226-8232
UT code for WoS article
000468050800012
EID of the result in the Scopus database
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