All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Overlap and rotate - a simple method for predicting out-of-plane and in-plane orientations of heteroepitaxial thin films

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F24%3A10254399" target="_blank" >RIV/61989100:27360/24:10254399 - isvavai.cz</a>

  • Alternative codes found

    RIV/61989100:27640/24:10254399

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S2468023024002888" target="_blank" >https://www.sciencedirect.com/science/article/pii/S2468023024002888</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.surfin.2024.104129" target="_blank" >10.1016/j.surfin.2024.104129</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Overlap and rotate - a simple method for predicting out-of-plane and in-plane orientations of heteroepitaxial thin films

  • Original language description

    The production of heteroepitaxial thin films is increasingly important due to their considerable utility in technical practice. This usability is determined by their specific physical and chemical properties influenced by the mutual crystallographic substrate-film orientation, both the out-of-plane and the in-plane. The possibility of predicting these orientations would reduce the time and financial burden of their experimental determination. This study shows how the out-of-plane and the in-plane orientation of heteroepitaxial film can be predicted by simply calculating number of overlapping atoms in a system of two overlapping crystallographic planes, one of which rotates relatively to the other. Coordinates of atoms in the crystallographic planes are taken from bulk structures, which contributes to the simplicity of the method. The average number of overlapping atoms (calculated from a 360o rotation) and the maximum number of overlapping atoms (including a corresponding angle) indicate the out-of-plane and the in-plane orientation, respectively. The method is tested on various substrate/film systems (SrTiO3/ZnO, Al2MgO4/ZnO, MgO/ZnO, MgO/CuO, Si/Al, MoS2/Au) and the results are compared with experimental data obtained from the literature. The good agreement with the experimental data shows this method to be reliable and sufficiently accurate for heteroepitaxial thin films.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20506 - Coating and films

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Surfaces and Interfaces

  • ISSN

    2468-0230

  • e-ISSN

    2468-0230

  • Volume of the periodical

    46

  • Issue of the periodical within the volume

    březen 2024

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    13

  • Pages from-to

    1-13

  • UT code for WoS article

    001224490300001

  • EID of the result in the Scopus database

    2-s2.0-85187332192