Damage formation and Er structural incorporation in m-plane and a-plane ZnO
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00520868" target="_blank" >RIV/61389005:_____/19:00520868 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22310/19:43919978
Result on the web
<a href="https://doi.org/10.1016/j.nimb.2018.10.003" target="_blank" >https://doi.org/10.1016/j.nimb.2018.10.003</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.nimb.2018.10.003" target="_blank" >10.1016/j.nimb.2018.10.003</a>
Alternative languages
Result language
angličtina
Original language name
Damage formation and Er structural incorporation in m-plane and a-plane ZnO
Original language description
The various crystallographic orientations in semiconductors as ZnO exhibit different resistivity under the ion beam irradiation/implantation. Study of the various crystallographic orientations is mandatory for nanostructured semiconductor system development. This paper reports on the implantation damage build-up, structural modification and Er dopant position in a-plane and m-plane ZnO implanted with Er+ 400 keV ions at the ion fluences 5 x 10(14), 2.5 x 10(15), 5 x 10(15) cm(-2) and subsequently annealed at 600 degrees C in O-2 atmosphere using Rutherford Back-Scattering spectrometry (RBS) in channelling mode as well as using Raman spectroscopy. Strongly suppressed surface damage formation was observed in both crystallographic orientations compared to the deep damage growth with the increased ion implantation fluence. More progressive damage accumulation appeared in m-plane ZnO compared to a-plane ZnO. Simultaneously, the strong Er out-diffusion depth profile in m-plane ZnO accompanied by the damage accumulation at the surface was observed after the annealing. Contrary, the surface recovery accompanied by Er concentration depth profiles keeping a normal distribution with a small maximum shift to the surface was observed in a-plane ZnO. Different structure recovery and Er behaviour was evidenced in a-plane and m-plane ZnO by RBS-C, moreover Raman spectroscopy proved a lower damage at higher ion fluences introduced in a-plane ZnO compared to m-plane. The structure modifications were discussed in connection with a damage accumulation and Er concentration depth profile shape in various ZnO crystallographic orientations in as-implanted and as-annealed samples.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments & Methods in Physics Research Section B
ISSN
0168-583X
e-ISSN
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Volume of the periodical
460
Issue of the periodical within the volume
12
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
38-46
UT code for WoS article
000504510900008
EID of the result in the Scopus database
2-s2.0-85054841489