Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00519076" target="_blank" >RIV/61389005:_____/19:00519076 - isvavai.cz</a>

Alternative codes found

RIV/60461373:22310/19:43919987 RIV/00216224:14740/19:00113436 RIV/00216208:11320/19:10402824

Result on the web

<a href="https://doi.org/10.1116/1.5125320" target="_blank" >https://doi.org/10.1116/1.5125320</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1116/1.5125320" target="_blank" >10.1116/1.5125320</a>

Result language

angličtina

Original language name

Distinct defect appearance in Gd implanted polar and nonpolar ZnO surfaces in connection to ion channeling effect

Original language description

We present results of (0001) c-plane, (11-20) a-plane, and m-plane (10-10) ZnO bulk crystals which were implanted with 400-keV Gd+ ions using fluences of 5 x 10(14), 1 x 10(15), 2.5 x 10(15), and 5 x 10(15) cm(-2). Structural changes during the implantation and subsequent annealing were characterized by Rutherford back-scattering spectrometry in channeling mode (RBS-C). The angular dependence of the backscattered ions (angular scans) in c-, a-, and m-plane ZnO was realized to get insight into structural modification and dopant position in various crystallographic orientations. X-ray diffraction (XRD) with mapping in reciprocal space was also used for introduced defect identification. Defect-accumulation depth profiles exhibited differences for c-, a-, and m-plane ZnO, with the a-plane showing significantly lower accumulated disorder in the deeper layer in Zn-sublattice, accompanied by the preservation of ion channeling phenomena in a-plane ZnO. Enlargement of the main lattice parameter was evidenced, after the implantation, in all orientations. The highest was evidenced in a-plane ZnO. The local compressive deformation was seen with XRD analysis in polar (c-plane) ZnO, and the tensile deformation was observed in nonpolar ZnO (a-plane and m-plane orientations) being in agreement with RBS-C results. Raman spectroscopy showed distinct structural modification in various ZnO orientations simultaneously with identification of the disordered structure in O-sublattice. Nonpolar ZnO showed a significant increase in disorder in O-sublattice exhibited by E-2(high) disappearance and enhancement of A(1)(LO) and E-1(LO) phonons connected partially to oxygen vibrational modes. The lowering of the E-2(low) phonon mode and shift to the lower wavenumbers was observed in c-plane ZnO connected to Zn-sublattice disordering. Such observations are in agreement with He ion channeling, showing channeling effect preservation with only slight Gd dopant position modification in a-plane ZnO and the more progressive diminishing of channels with subsequent Gd movement to random position with the growing ion fluence and after the annealing in c-plane and m-plane ZnO.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2019

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films

ISSN

0734-2101

e-ISSN

—

Volume of the periodical

37

Issue of the periodical within the volume

6

Country of publishing house

US - UNITED STATES

Number of pages

11

Pages from-to

061406

UT code for WoS article

000504231200023

EID of the result in the Scopus database

2-s2.0-85075464240