High energy Au plus ion implantation of polar and nonpolar ZnO-Structure modification and optical properties
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F20%3A43921653" target="_blank" >RIV/60461373:22310/20:43921653 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/20:00524445
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/epdf/10.1002/sia.6789" target="_blank" >https://onlinelibrary.wiley.com/doi/epdf/10.1002/sia.6789</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/sia.6789" target="_blank" >10.1002/sia.6789</a>
Alternative languages
Result language
angličtina
Original language name
High energy Au plus ion implantation of polar and nonpolar ZnO-Structure modification and optical properties
Original language description
The paper presents a study of 5-MeV energy Au+ ion implantation in polar c-plane (0001), nonpolar a-plane (11-20) and m-plane (10-10) ZnO crystallographic cuts using fluences of 5 x 10(14) and 1 x 10(15) cm(-2). The implanted samples were subsequently annealed in O-2 atmosphere at 600 degrees C. It was shown that a-plane ZnO exhibited a lowest level of Zn sublattice disorder evidenced by Rutherford backscattering spectroscopy in channelling mode (RBS-C); in contrast, m-plane ZnO showed the highest disorder. The disorder in the Zn sublattice grew progressively in the subsurface as well as in the implanted layer in c-plane and m-plane ZnO, while a-plane has shown slight increase of disorder just in the implanted layer. Angular scans provided using RBS-C have shown the preservation of channelling effect in the subsurface layer in a-plane ZnO. On the contrary, the narrowed and shallow angular scan dips were seen in m-plane ZnO. Raman spectroscopy has shown significant O-sublattice disorder and O rearrangement mainly in a-plane and m-plane ZnO compared to c-plane. After ion implantation, the exciton-related luminescence band at 375 nm vanished almost completely, and the defect-related band 'shifted' to shorter wavelengths. Annealing has beneficial influence on near-band-edge (NBE) luminescence recovery, whereas deep-level-emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Surface Interface Analysis
ISSN
0142-2421
e-ISSN
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Volume of the periodical
52
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
1083-1088
UT code for WoS article
000529053100001
EID of the result in the Scopus database
2-s2.0-85084730003