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High energy Au+ ion implantation of polar and nonpolar ZnO-Structure modification and optical properties

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F20%3A43895666" target="_blank" >RIV/44555601:13440/20:43895666 - isvavai.cz</a>

  • Result on the web

    <a href="https://onlinelibrary.wiley.com/doi/10.1002/sia.6789" target="_blank" >https://onlinelibrary.wiley.com/doi/10.1002/sia.6789</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1002/sia.6789" target="_blank" >10.1002/sia.6789</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    High energy Au+ ion implantation of polar and nonpolar ZnO-Structure modification and optical properties

  • Original language description

    The paper presents a study of 5-MeV energy Au+ ion implantation in polar c-plane (0001), nonpolar a-plane (11-20) and m-plane (10-10) ZnO crystallographic cuts using fluences of 5 x 1014 and 1 x 1015 cmMINUS SIGN 2. The implanted samples were subsequently annealed in O2 atmosphere at 600oC. It was shown that a-plane ZnO exhibited a lowest level of Zn sublattice disorder evidenced by Rutherford backscattering spectroscopy in channelling mode (RBS-C); in contrast, m-plane ZnO showed the highest disorder. The disorder in the Zn sublattice grew progressively in the subsurface as well as in the implanted layer in c-plane and m-plane ZnO, while a-plane has shown slight increase of disorder just in the implanted layer. Angular scans provided using RBS-C have shown the preservation of channelling effect in the subsurface layer in a-plane ZnO. On the contrary, the narrowed and shallow angular scan dips were seen in m-plane ZnO. Raman spectroscopy has shown significant O-sublattice disorder and O rearrangement mainly in a-plane and m-plane ZnO compared to c-plane. After ion implantation, the exciton-related luminescence band at 375 nm vanished almost completely, and the defect-related band &apos;shifted&apos; to shorter wavelengths. Annealing has beneficial influence on near-band-edge (NBE) luminescence recovery, whereas deep-level-emission (DLE) luminesce has been shifted to lower wavelengths than appeared after implantation

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10304 - Nuclear physics

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Surface And Interface Analysis

  • ISSN

    0142-2421

  • e-ISSN

  • Volume of the periodical

    52

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    6

  • Pages from-to

    1083-1088

  • UT code for WoS article

    000529053100001

  • EID of the result in the Scopus database

    2-s2.0-85084730003