Damage accumulation and implanted Gd and Au position in a- and c-plane GaN
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00504789" target="_blank" >RIV/61389005:_____/19:00504789 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/19:00504789 RIV/44555601:13440/19:43894726 RIV/60461373:22310/19:43918123 RIV/60461373:22810/19:43918123
Result on the web
<a href="https://doi.org/10.1016/j.tsf.2019.04.035" target="_blank" >https://doi.org/10.1016/j.tsf.2019.04.035</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2019.04.035" target="_blank" >10.1016/j.tsf.2019.04.035</a>
Alternative languages
Result language
angličtina
Original language name
Damage accumulation and implanted Gd and Au position in a- and c-plane GaN
Original language description
Abstract: (0001) c-plane and (11-20) a-plane GaN epitaxial layers were implanted with 400 keV Au+ and Gd+ ions using ion implantation fluences of 5x10(14), 1x10(15) and 5x10(15) cm(-2). Rutherford Back-Scattering spectrometry in channelling mode (RBS/C) was used to follow the dopant depth profiles and the introduced disorder, the angular dependence of the backscattered ions (angular scans) in c-and a-plane GaN was measured to get insight into structural modification and dopant position in various crystallographic orientations. Defect-accumulation depth profiles exhibited differences for a-and c-plane GaN, with a-plane showing significantly lower accumulated disorder in the buried layer, accompanied by the shift of the maximum damage accumulation into the deeper layer with respect to the theoretical prediction, than c-plane GaN. Angular scans showed channelling preservation in as-implanted samples and better channelling recovery in the annealed a-plane GaN compared to c-plane GaN. The angular scan widths were simulated by FLUX code as well as the half-width modifications of angular scans were discussed in connection to the damage accumulation. Photoluminescence measurement followed in detail yellow band and band edge luminescence decline after the implantation and the recovery of luminescence spectra features after annealing.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10304 - Nuclear physics
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
—
Volume of the periodical
680
Issue of the periodical within the volume
6
Country of publishing house
CH - SWITZERLAND
Number of pages
12
Pages from-to
102-113
UT code for WoS article
000467389900016
EID of the result in the Scopus database
2-s2.0-85065012318