Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400?keV Kr and Gd ions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F18%3A43893891" target="_blank" >RIV/44555601:13440/18:43893891 - isvavai.cz</a>

Alternative codes found

RIV/61389005:_____/18:00497102 RIV/60461373:22310/18:43915726

Result on the web

<a href="http://dx.doi.org/10.1016/j.surfcoat.2018.02.097" target="_blank" >http://dx.doi.org/10.1016/j.surfcoat.2018.02.097</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2018.02.097" target="_blank" >10.1016/j.surfcoat.2018.02.097</a>

Result language

angličtina

Original language name

Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400?keV Kr and Gd ions

Original language description

GaN is the most actively studied wide-bandgap material, applicable e.g. in short-wavelength optoelectronic devices, high-electron-mobility transistors, and semiconductor lasers. The crystallographic orientation of an implanted crystal can significantly influence the optical properties of the implanted layer, reflecting the rearrangement of the crystal matrix after annealing. The annealing procedure, influencing dynamic recovery, point defect diffusion and large defect stabilisation, depending on the GaN crystal orientation and the used ion implantation parameters, is still an important issue to be studied. We have studied the structural and compositional changes of the GaN-epitaxial-layers of c-plane and a-plane orientations grown by MOVPE and implanted with Gd and Kr ions using the ion energy of 400 keV and ion fluences of 5 x 1014 cmMINUS SIGN 2, 1 x 1015 cmMINUS SIGN 2 and 5 x 1015 cmMINUS SIGN 2 with subsequent annealing at 800 oC in ammonia. Dopant depth profiling was accomplished by Rutherford backscattering spectrometry (RBS). Induced structure disorder and its recovery during subsequent annealing were characterised by RBS channelling and Raman spectroscopy. Ion-implanted c-plane and a-plane GaN exhibit significant differences in damage accumulation simultaneously with post-implantation annealing, inducing a different structural reorganization of the GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the ion-implantation fluence and ion mass.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Surface and coatings technology

ISSN

0257-8972

e-ISSN

—

Volume of the periodical

2018

Issue of the periodical within the volume

355

Country of publishing house

CH - SWITZERLAND

Number of pages

7

Pages from-to

22-28

UT code for WoS article

000449896800006

EID of the result in the Scopus database

2-s2.0-85042634118