Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au ions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43915745" target="_blank" >RIV/60461373:22310/18:43915745 - isvavai.cz</a>
Alternative codes found
RIV/61389005:_____/18:00496731
Result on the web
<a href="https://onlinelibrary.wiley.com/doi/epdf/10.1002/sia.6403" target="_blank" >https://onlinelibrary.wiley.com/doi/epdf/10.1002/sia.6403</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/sia.6403" target="_blank" >10.1002/sia.6403</a>
Alternative languages
Result language
angličtina
Original language name
Damage accumulation and structural modification in a‐ and c‐plane GaN implanted with 400‐keV and 5‐MeV Au ions
Original language description
c-plane (0001) and a-plane (11-20) gallium nitride (GaN) epitaxial layers were grown by Metal organic Vapour Phase epitaxy (MOVPE) on sapphire and subsequently implanted with 400-keV and 5-MeV Au+ ions using fluences 5 x 10(14) to 5 x 10(15) cm(-2). The shallow Au depth profiling was accomplished by Rutherford backscattering spectrometry. The structural changes during implantation and subsequent annealing were characterised by Rutherford backscattering spectrometry channelling and Raman spectroscopy. The interplay between nuclear and electronic stopping, influencing defect accumulation, was monitored and discussed depending on GaN orientation. Post-implantation annealing induced a structural reorganisation of the GaN structure depending on the ion-implantation fluence, ion energy, and on the crystallographic orientation.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10402 - Inorganic and nuclear chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Surface Interface Analysis
ISSN
0142-2421
e-ISSN
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Volume of the periodical
50
Issue of the periodical within the volume
11
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
1099-1105
UT code for WoS article
000448889600022
EID of the result in the Scopus database
2-s2.0-85042605382