Structural and optical properties of vanadium ion-implanted GaN
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F17%3AN0000027" target="_blank" >RIV/26722445:_____/17:N0000027 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/17:00479636 RIV/61389005:_____/17:00479636 RIV/60461373:22310/17:43913399 RIV/44555601:13440/17:43892908
Result on the web
<a href="http://dx.doi.org/10.1016/j.nimb.2017.01.010" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2017.01.010</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.nimb.2017.01.010" target="_blank" >10.1016/j.nimb.2017.01.010</a>
Alternative languages
Result language
angličtina
Original language name
Structural and optical properties of vanadium ion-implanted GaN
Original language description
The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0001) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20305 - Nuclear related engineering; (nuclear physics to be 1.3);
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments and Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
ISSN
0168-583X
e-ISSN
1872-9584
Volume of the periodical
406
Issue of the periodical within the volume
September
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
5
Pages from-to
53-57
UT code for WoS article
000409152800012
EID of the result in the Scopus database
2-s2.0-85009754176