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Structural and optical properties of vanadium ion-implanted GaN

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F17%3AN0000027" target="_blank" >RIV/26722445:_____/17:N0000027 - isvavai.cz</a>

  • Alternative codes found

    RIV/67985882:_____/17:00479636 RIV/61389005:_____/17:00479636 RIV/60461373:22310/17:43913399 RIV/44555601:13440/17:43892908

  • Result on the web

    <a href="http://dx.doi.org/10.1016/j.nimb.2017.01.010" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2017.01.010</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.nimb.2017.01.010" target="_blank" >10.1016/j.nimb.2017.01.010</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Structural and optical properties of vanadium ion-implanted GaN

  • Original language description

    The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0001) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20305 - Nuclear related engineering; (nuclear physics to be 1.3);

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2017

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Nuclear Instruments and Methods in Physics Research Section B-Beam Interactions with Materials and Atoms

  • ISSN

    0168-583X

  • e-ISSN

    1872-9584

  • Volume of the periodical

    406

  • Issue of the periodical within the volume

    September

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    5

  • Pages from-to

    53-57

  • UT code for WoS article

    000409152800012

  • EID of the result in the Scopus database

    2-s2.0-85009754176