Structural and optical properties of Gd implanted GaN with various crystallographic orientations
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F17%3AN0000028" target="_blank" >RIV/26722445:_____/17:N0000028 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/17:00479677 RIV/61389005:_____/17:00479677 RIV/60461373:22310/17:43913373 RIV/44555601:13440/17:43892900
Result on the web
<a href="http://dx.doi.org/10.1016/j.tsf.2017.07.036" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2017.07.036</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2017.07.036" target="_blank" >10.1016/j.tsf.2017.07.036</a>
Alternative languages
Result language
angličtina
Original language name
Structural and optical properties of Gd implanted GaN with various crystallographic orientations
Original language description
Structure, morphology, and optical properties of Gd implanted GaN epitaxial layers were studied for (0001), (11-20), and (11-22) orientations. The GaN layers grown by MOVPE on sapphire were subsequently implanted with 200 keV Gd+ ions using fluences of 5 x 10(15) and 5 x 10(16) cm(-2). Dopant depth profiling was accomplished by Rutherford Back-Scattering spectrometry (RBS). Structural and optical changes during subsequent annealing were characterized by RBS, Raman spectroscopy, and photoluminescence measurements. Post-implantation annealing induced a structural reorganization of GaN structure in the buried layer depending on the introduced disorder level, i.e. depending on the implantation fluence and on crystallographic orientation. The defect density depth distribution was evaluated by RBS. The surface morphology and optical properties depend on particular crystallographic orientation.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Volume of the periodical
638
Issue of the periodical within the volume
September
Country of publishing house
CH - SWITZERLAND
Number of pages
10
Pages from-to
63-72
UT code for WoS article
000411775900009
EID of the result in the Scopus database
2-s2.0-85025099941