Spoof plasmons in corrugated semiconductors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F15%3A86095516" target="_blank" >RIV/61989100:27640/15:86095516 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1080/09205071.2015.1065772" target="_blank" >http://dx.doi.org/10.1080/09205071.2015.1065772</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1080/09205071.2015.1065772" target="_blank" >10.1080/09205071.2015.1065772</a>

Result language
angličtina
Original language name
Spoof plasmons in corrugated semiconductors
Original language description
We report on a theoretical investigation of the dispersion relation of surface plasmon polaritons (SPPs) on a periodically corrugated semiconductor surface. We assumed Drudes permittivity model of the semiconductor, which accurately describes the loss ofthese spoof SPPs. In the THz frequency range, the properties of the dispersion and loss of spoof SPPs on corrugated Si surfaces are studied. A low-loss propagation of spoof SPPs can be achieved by an optimum design of the surface structure. It was foundthat by increasing the lattice constant or by reducing the groove depth, the investigated structure can provide a low guiding attenuation.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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