Propagation of surface waves formed at the interface between hyperbolic metamaterial and highly doped semiconductor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F16%3A86098072" target="_blank" >RIV/61989100:27640/16:86098072 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1007/s11082-016-0523-0" target="_blank" >http://dx.doi.org/10.1007/s11082-016-0523-0</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s11082-016-0523-0" target="_blank" >10.1007/s11082-016-0523-0</a>

Result language
angličtina
Original language name
Propagation of surface waves formed at the interface between hyperbolic metamaterial and highly doped semiconductor
Original language description
We provide an analysis of surface-wave propagation at a boundary between a semiconductor and a multilayered hyperbolic metamaterial. In particular we analyzed the structure dispersion for various cases of a hyperbolic metamaterial. It is concluded that one can tune the frequency range of surface waves by varying the thickness of dielectric sheets. It is also shown that this frequency range can be broadened by decreasing the thickness of the dielectric in the metal-dielectric compound or by increasing the doping concentration of the semiconductor.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Project
<a href="/en/project/ED1.1.00%2F02.0070" target="_blank" >ED1.1.00/02.0070: IT4Innovations Centre of Excellence</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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