Metamaterial-inspired Perfect Tunnelling in Semiconductor Heterostructures

Result code in IS VaVaI

RIV/68407700:21230/11:00181870 - isvavai.cz

Result on the web

http://iopscience.iop.org/1367-2630/13/8/083011/

DOI - Digital Object Identifier

10.1088/1367-2630/13/8/083011

Result language

angličtina

Original language name

Metamaterial-inspired Perfect Tunnelling in Semiconductor Heterostructures

Original language description

In this paper, we use a formal analogy of the electromagnetic wave equation and the Schrödinger equation in order to study the phenomenon of perfect tunnelling (tunnelling with unitary transmittance) in a one-dimensional semiconductor heterostructure. Using the Kane model of a semiconductor, we show that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials (substances with negative material parameters) are involved. We believe that these results can pave the way toward interesting applications in which metamaterial ideas are transferred into the semiconductor domain.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

GA102/09/0314: Investigation of metamaterials and microwave structures with the help of noise spectroscopy and magnetic resonance

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)
S - Specificky vyzkum na vysokych skolach

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

New Journal of Physics

ISSN

1367-2630

e-ISSN

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Volume of the periodical

13

Issue of the periodical within the volume

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Country of publishing house

GB - UNITED KINGDOM

Number of pages

9

Pages from-to

"nečíslov. (ArtNo=083011)"

UT code for WoS article

000294672100002

EID of the result in the Scopus database

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