Metamaterial-inspired Perfect Tunnelling in Semiconductor Heterostructures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00181870" target="_blank" >RIV/68407700:21230/11:00181870 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/1367-2630/13/8/083011/" target="_blank" >http://iopscience.iop.org/1367-2630/13/8/083011/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1367-2630/13/8/083011" target="_blank" >10.1088/1367-2630/13/8/083011</a>

Result language
angličtina
Original language name
Metamaterial-inspired Perfect Tunnelling in Semiconductor Heterostructures
Original language description
In this paper, we use a formal analogy of the electromagnetic wave equation and the Schrödinger equation in order to study the phenomenon of perfect tunnelling (tunnelling with unitary transmittance) in a one-dimensional semiconductor heterostructure. Using the Kane model of a semiconductor, we show that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials (substances with negative material parameters) are involved. We believe that these results can pave the way toward interesting applications in which metamaterial ideas are transferred into the semiconductor domain.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
<a href="/en/project/GA102%2F09%2F0314" target="_blank" >GA102/09/0314: Investigation of metamaterials and microwave structures with the help of noise spectroscopy and magnetic resonance</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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