Perfect Tunneling in Semiconductor Heterostructures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F11%3A00184644" target="_blank" >RIV/68407700:21230/11:00184644 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Perfect Tunneling in Semiconductor Heterostructures
Original language description
We study the phenomenon of perfect tunneling (tunneling with unitary transmittance) in a 1D semiconductor heterostructure using a formal analogy of the electromagnetic wave equation and the Schrodinger equation. The Kane model of a semiconductor is usedand it is shown that this phenomenon can indeed exist, resembling all the interesting features of the corresponding phenomenon in classical electromagnetism in which metamaterials are involved.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F09%2F0314" target="_blank" >GA102/09/0314: Investigation of metamaterials and microwave structures with the help of noise spectroscopy and magnetic resonance</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of Metamaterials´ 2011: The Fifth International Congress on Advanced Electromagnetic Materials in Microwaves and Optics
ISBN
978-952-67611-0-7
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
1021-1023
Publisher name
UCL, Laboratoire d´Hyperfréquences
Place of publication
Louvain-la-Neuve
Event location
Barcelona
Event date
Oct 10, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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