All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Controlling the plasmonic properties of titanium nitride thin films by radiofrequency substrate biasing in magnetron sputtering

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F21%3A10248224" target="_blank" >RIV/61989100:27640/21:10248224 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216305:26620/21:PU141898 RIV/61989592:15640/21:73607589 RIV/61989592:15310/21:73607589

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S016943322100619X?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S016943322100619X?via%3Dihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.apsusc.2021.149543" target="_blank" >10.1016/j.apsusc.2021.149543</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Controlling the plasmonic properties of titanium nitride thin films by radiofrequency substrate biasing in magnetron sputtering

  • Original language description

    Titanium nitride (TiN) is a promising plasmonic material alternative to gold and silver thanks to its refractory character, low resistivity (&lt;100 mu Omega cm) and compatibility with microelectronic industry processes. Extensive research is currently focusing on the development of magnetron sputtering as a large-scale technique to produce TiN thin films with low resistivity and optimized plasmonic performance. As such, more knowledge on the correlation between process parameters and the functional properties of TiN is needed. Here we report the effect of radiofrequency (RF) substrate biasing during the sputtering process on the structural, optical and electrical properties of TiN films. We employ spectroscopic ellipsometry as a sensible characterization method and we show that a moderate RF power, despite reducing the grain size, allows to achieve optimal plasmonic quality factors and a low resistivity (&lt;100 mu Omega cm). This is attributed to the introduction of a slight under-stoichiometry in the material (i.e., TiN0.85), as opposite to the films synthesized without bias or under intense bombardment conditions. RF substrate biasing during magnetron sputtering appears thus as a viable tool to prepare TiN thin films at room temperature with desired plasmonic properties.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10300 - Physical sciences

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2021

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Surface Science

  • ISSN

    0169-4332

  • e-ISSN

  • Volume of the periodical

    554

  • Issue of the periodical within the volume

    July

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

  • UT code for WoS article

    000647733600004

  • EID of the result in the Scopus database

    2-s2.0-85103101418