Monomolecular Membrane-Assisted Growth of Antimony Halide Perovskite/MoS2 Van der Waals Epitaxial Heterojunctions with Long-Lived Interlayer Exciton
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F24%3A10255088" target="_blank" >RIV/61989100:27710/24:10255088 - isvavai.cz</a>
Result on the web
<a href="https://pubs.acs.org/doi/10.1021/acsnano.4c05293#" target="_blank" >https://pubs.acs.org/doi/10.1021/acsnano.4c05293#</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsnano.4c05293" target="_blank" >10.1021/acsnano.4c05293</a>
Alternative languages
Result language
angličtina
Original language name
Monomolecular Membrane-Assisted Growth of Antimony Halide Perovskite/MoS2 Van der Waals Epitaxial Heterojunctions with Long-Lived Interlayer Exciton
Original language description
Epitaxial growth stands as a key method for integrating semiconductors into heterostructures, offering a potent avenue to explore the electronic and optoelectronic characteristics of cutting-edge materials, such as transition metal dichalcogenide (TMD) and perovskites. Nevertheless, the layer-by-layer growth atop TMD materials confronts a substantial energy barrier, impeding the adsorption and nucleation of perovskite atoms on the 2D surface. Here, we epitaxially grown an inorganic lead-free perovskite on TMD and formed van der Waals (vdW) heterojunctions. Our work employs a monomolecular membrane-assisted growth strategy that reduces the contact angle and simultaneously diminishing the energy barrier for Cs3Sb2Br9 surface nucleation. By controlling the nucleation temperature, we achieved a reduction in the thickness of the Cs3Sb2Br9 epitaxial layer from 30 to approximately 4 nm. In the realm of inorganic lead-free perovskite and TMD heterojunctions, we observed long-lived interlayer exciton of 9.9 ns, approximately 36 times longer than the intralayer exciton lifetime, which benefited from the excellent interlayer coupling brought by direct epitaxial growth. Our research introduces a monomolecular membrane-assisted growth strategy that expands the diversity of materials attainable through vdW epitaxial growth, potentially contributing to future applications in optoelectronics involving heterojunctions.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21000 - Nano-technology
Result continuities
Project
<a href="/en/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institute of Environmental Technology - Excellent Research</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS Nano
ISSN
1936-0851
e-ISSN
1936-086X
Volume of the periodical
18
Issue of the periodical within the volume
26
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
"17282–17292"
UT code for WoS article
001252883700001
EID of the result in the Scopus database
2-s2.0-85196883859