Chemical vapor deposition of doped graphene: exploring the role of solid, liquid, and gas precursors in tailoring properties

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F25%3A10257262" target="_blank" >RIV/61989100:27710/25:10257262 - isvavai.cz</a>
Alternative codes found
RIV/61989100:27640/25:10257262
Result on the web
<a href="https://www.webofscience.com/wos/woscc/full-record/WOS:001435917500001" target="_blank" >https://www.webofscience.com/wos/woscc/full-record/WOS:001435917500001</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6463/adb6b6" target="_blank" >10.1088/1361-6463/adb6b6</a>

Result language
angličtina
Original language name
Chemical vapor deposition of doped graphene: exploring the role of solid, liquid, and gas precursors in tailoring properties
Original language description
Graphene is an atomically thin material composed of a single layer of carbon atoms arranged in a hexagonal lattice, which exhibits unique electrical, thermal, and mechanical properties. The intentional introduction of foreign atoms into the structure of graphene by doping is a powerful approach for modifying these properties, making graphene suitable for a range of advanced applications. Among the various synthesis techniques, chemical vapor deposition (CVD) is particularly effective for doping because it allows precise control over the growth conditions and dopant incorporation, outperforming other synthesis strategies in terms of scalability, uniformity, and clean growth. This review examines how solid, liquid, and gaseous precursor types play crucial roles in CVD doping, directly affecting the growth dynamics, doping efficiency, and material quality. By analyzing the mechanisms associated with each precursor form, this review highlights how these strategies address the challenges of achieving consistent and high-quality doped graphene. This discussion provides valuable insight into advancing CVD techniques for producing doped graphene with enhanced properties for cutting-edge applications.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21000 - Nano-technology

Publication year
2025
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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