The Properties of SiC in Comparison with Si Semiconductor Devices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27730%2F13%3A86086623" target="_blank" >RIV/61989100:27730/13:86086623 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
The Properties of SiC in Comparison with Si Semiconductor Devices
Original language description
The SiC ? silicon carbide MOSFET has exclusive features thanks its become better switch than Si ? silicon semiconductor switch. There are some special features that need to be understood for use to in full devices potential. The advantages and differences of SiC MOSFETs have been described in this article in compare with Si IGBT transistor.
Czech name
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Czech description
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Project
<a href="/en/project/EE2.3.30.0055" target="_blank" >EE2.3.30.0055: New creative teams in priorities of scientific research</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2013 International Conference on Applied Electronics : Pilsen, 10-12 September 2013
ISBN
978-80-261-0166-6
ISSN
1803-7232
e-ISSN
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Number of pages
4
Pages from-to
309-312
Publisher name
University of West Bohemia in Pilsen
Place of publication
Pilsen
Event location
Plzeň
Event date
Sep 10, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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