Hardware Development of DC/DC Converter in Buck Mode

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F22%3A00362735" target="_blank" >RIV/68407700:21230/22:00362735 - isvavai.cz</a>
Result on the web
<a href="https://poster.fel.cvut.cz/poster2023/" target="_blank" >https://poster.fel.cvut.cz/poster2023/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Hardware Development of DC/DC Converter in Buck Mode
Original language description
In this paper, the discussion is based on the SiC MOSFET’s which have the advantageous properties than silicon [1]. SiC MOSFET’s are used for high voltage, high frequency, and high temperature where the gate driving topology for SiC MOSFET’s are too sensitive with parasitic capacitance, package inductance, and PCB power loop inductance [3]. The rate of change of voltage and current i.e., switching transitions will create unwanted oscillation, overshoots and electromagnetic interference which impacts the overall system operation and reliability [4]. To improve the EMI and oscillations, the selective gate resistance Rg should be considered [5]. So, the only solution is to select the appropriate value of gate resistance (Rg) to reduce the EMI and switching oscillations [6]. The discussion of the DC/DC converter in buck mode with two C3M0065090J (SiC MOSFET’s) in a phase leg configuration and their results are presented.
Czech name
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Czech description
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Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Student Scientific Conference Poster – 26/2022
ISBN
978-80-01-06992-9
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
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Publisher name
Fakulta elektrotechnická
Place of publication
Praha
Event location
Praha
Event date
May 12, 2022
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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