Clamping of Negative Voltage Spikes of the SiC based Half-Bridge Circuit
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F23%3A00366264" target="_blank" >RIV/68407700:21230/23:00366264 - isvavai.cz</a>
Result on the web
<a href="https://poster.fel.cvut.cz/poster2023/" target="_blank" >https://poster.fel.cvut.cz/poster2023/</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Clamping of Negative Voltage Spikes of the SiC based Half-Bridge Circuit
Original language description
In this paper, the discussion is based on the reduction of the negative gate voltage spikes for the SiC based MOSFET half-bridge converter using the transil diode and diode in antiparallel to the gate which acts as a driver. SiC MOSFET’s can be able to work for high frequencies, high voltages having low on-state resistance and less temperature changes. In the Half-bridge converter, due to its high dv/dt, there will be fast switching transient for high-side MOSFET which causes the negative impact on the parasitic components and produce the negative voltage spikes on the low-side MOSFET which may cause the damage of switches or over stress the circuit for safe operation. The SiC MOSFET is represented with only parasitic capacitances in the circuit and this circuit is designed by using the software tool called SIMPLIS/SIMETRIX.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/FW06010024" target="_blank" >FW06010024: Pre-charging unit for HCB or SSCB circuit breakers</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the International Student Scientific Conference Poster - 27/2023
ISBN
978-80-01-07140-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
160-163
Publisher name
Fakulta elektrotechnická
Place of publication
Praha
Event location
Praha
Event date
May 11, 2023
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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