Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989592%3A15310%2F12%3A33141779" target="_blank" >RIV/61989592:15310/12:33141779 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1021/jp208011y" target="_blank" >http://dx.doi.org/10.1021/jp208011y</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/jp208011y" target="_blank" >10.1021/jp208011y</a>

Result language

angličtina

Original language name

Low-Temperature Synthesis and Characterization of Gallium Nitride Quantum Dots in Ordered Mesoporous Silica

Original language description

Semiconducting gallium nitride (GaN) quantum dots (QDs) were synthesized at low temperatures (650 degrees C), using ammonia flow without any organogallium precursor compound, assisted and controlled by an ordered mesoporous silica MCM-41 as host matrix.The final materials exhibit an intense blue shift of the band gap energy compared to the three-dimensional (3D) GaN. MCM-41 hosted GaN QD synthesis is also reported from pyrolysis of an organic precursor, tris(dimethylamido)gallium(M), at 365 degrees C under ammonia flow, with the largest band gap blue shift reported for such synthesized GaN of 0.6 eV. The QDs, involving inorganic precursor, exhibit an average X-ray diffraction estimated diameter of 12.6 angstrom and crystallize in the zinc blende lattice with cubic symmetry (beta-GaN), whereas the hexagonal system is thermodynamically preferred. QDs, based on organic precursor, have hexagonal symmetry (alpha-GaN, wurtzite structure) with an average diameter of 20.6 angstrom. Spectrosco

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

CF - Physical chemistry and theoretical chemistry

OECD FORD branch

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Project

<a href="/en/project/ED2.1.00%2F03.0058" target="_blank" >ED2.1.00/03.0058: Regional Centre of Advanced Technologies and Materials</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physical Chemistry Part C: Nanomaterials and Interfaces

ISSN

1932-7447

e-ISSN

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Volume of the periodical

116

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

15

Pages from-to

1185-1194

UT code for WoS article

000298978700147

EID of the result in the Scopus database

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