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Possibilities of laser recrystallization and laser ablation in thin-layer structures based on a-Si:H

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F20%3A00540759" target="_blank" >RIV/67985858:_____/20:00540759 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/20:00540759

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Possibilities of laser recrystallization and laser ablation in thin-layer structures based on a-Si:H

  • Original language description

    Our goal is to enhance optoelectronic properties and light conversion efficiency in hydrogenated silicon thin films by in-situ embedded nanoparticles using radio frequency chemical vapor deposition (RF CVD) combined with other methods such as molecular beam epitaxy, magnetron sputtering, Langmuir/Blodgett method, reactive deposition epitaxy, laser surface treatment, laser ablation, reactive laser ablation, vacuum evaporation and plasma treatment.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů