Possibilities of laser recrystallization and laser ablation in thin-layer structures based on a-Si:H
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F20%3A00540759" target="_blank" >RIV/67985858:_____/20:00540759 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/20:00540759
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Possibilities of laser recrystallization and laser ablation in thin-layer structures based on a-Si:H
Original language description
Our goal is to enhance optoelectronic properties and light conversion efficiency in hydrogenated silicon thin films by in-situ embedded nanoparticles using radio frequency chemical vapor deposition (RF CVD) combined with other methods such as molecular beam epitaxy, magnetron sputtering, Langmuir/Blodgett method, reactive deposition epitaxy, laser surface treatment, laser ablation, reactive laser ablation, vacuum evaporation and plasma treatment.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů