Technolgy of materials preparation for the high sensitivity infrared detectors.

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F01%3A13010049" target="_blank" >RIV/67985882:_____/01:13010049 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Technolgy of materials preparation for the high sensitivity infrared detectors.
Original language description
Single crystals of triglycine sulphate (TGS) doped with L-alanin, lysin and with Co 2+ , Cd 2+ and PO 4 3- were grown from aqueous solutions by means of slow cooling method. Concentration of doping elements varied from 5 to 20mol. per cent. Morphology, domain structure and P-E hysteresis loops have been investigated. TGS single crystals doped with Co 2+ and PO 4 3- show the inernal fields as high as 217 kV/m with peculiarities in the hysteresis loops. The best hysteresis loop has been obtained on TGS crystal doped with Lysin and Cd 2+ ions.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
International Conference Applied Electronics 2001.
ISBN
80-7082-758-0
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
180-182
Publisher name
Západočeská univerzita
Place of publication
Plzeň
Event location
Pilsen [CZ]
Event date
Sep 5, 2001
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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