Ga 1-x In x SB-MOVPE growth and thermodynamic model.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F01%3A13010091" target="_blank" >RIV/67985882:_____/01:13010091 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Ga 1-x In x SB-MOVPE growth and thermodynamic model.

Original language description

The aim of this work was to prepare good-quality Ga 1-x In x Sb ternary laeyrs using MOVPE growth. The quality of the layer surfaces was inspected by atomic force microscopy. The experimental results obtained were compared with the calculated depositiondiagrams. The composition of grown ternary layers was determined using x-ray microanalysis. Dependence of the solid-phase composition on the gaseous-phase composition in the system was compared with the calculated results on the bases of the thermodynamic model.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

<a href="/en/project/GA202%2F98%2FP254" target="_blank" >GA202/98/P254: Preparation and characterization of epitaxial semiconductor MOVPE layers and structure based on GaSb</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2001

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

16

Issue of the periodical within the volume

9

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

759-762

UT code for WoS article

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EID of the result in the Scopus database

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