Thermodynamic modeling of AlGaInN growth by MOVPE

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F04%3A00011545" target="_blank" >RIV/60461373:22310/04:00011545 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22310/04:00011546 RIV/60461373:22340/04:00011142
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Thermodynamic modeling of AlGaInN growth by MOVPE
Original language description
A detailed thermodynamic analysis of the system Al-Ga-In-N-C-H was performed using the Gibbs energy minimization method. The multicomponent gaseous phase, ternary liquid alloy of AIII elements, solid solution of AIII nitrides as well as graphite and Al4C3 were included into the calculation. The influence of the initial conditions, namely temperature, pressure and input gas phase composition, on the equilibrium composition of this system was in view. On the basis of the concept of local equilibrium between the growing layer and the gaseous phase in its close vicinity, the calculated results were used to optimize deposition parameters for MOVPE growth of (Al,Ga,In)N epitaxial layers.
Czech name
Termodynamické modelování růstu AlGaInN metodou MOVPE
Czech description
Termodynamické modelování růstu AlGaInN metodou MOVPE

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BJ - Thermodynamics
OECD FORD branch
—

Project
<a href="/en/project/GA104%2F03%2F0387" target="_blank" >GA104/03/0387: Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2004
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)