Profiling of a GaAs structure using the probe method.
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F02%3A13020116" target="_blank" >RIV/67985882:_____/02:13020116 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Profiling of a GaAs structure using the probe method.
Original language description
Determination of doping concentration profiles of GaAs on bevelled surface by the probe method is presented. The results are compared with electrochemical capacitance-voltage technique.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/KSK1010104" target="_blank" >KSK1010104: Condensed matter physics and materials science</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ASDAM'02. Proceedings of the Fourth International Conference on Advanced Semiconductor Devices and Microsystems.
ISBN
0-7803-7276-X
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
231-234
Publisher name
IEEE
Place of publication
Piscataway
Event location
Smolenice [SK]
Event date
Oct 14, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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