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Drug Profiling III. - Evaluting of Results
Mathematical and statistical evalution methiods of processing amphetamine impurities profiling are described here.
CB - Analytická chemie, separace
- 2000 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO(2)
This paper reports on the results of the calculation of the depth distribution profiles of the concentration of the impurity implanted into an anisotropic crystalline ofthe impurity along structural channels, and accumulati...
BM - Fyzika pevných látek a magnetismus
- 2011 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Line Intensity Radial Profiles Evolution in VUV & XUV Spectral Range.
One of the important topics in a fusion research is the study of the character of the impurities transport in tokamak plasma periphery.In plasma near the edge region, identification of impurity sources and the impurity tran...
BL - Fyzika plasmatu a výboje v plynech
- 2003 •
- D
Rok uplatnění
D - Stať ve sborníku
Carbon transport in TCV
]. A 1D impurity transport model was used to infer carbon transport parameters from the steady state profiles of fully ionized carbon. At high q95 a phenomenon of impurityKnowledge of the impurity transport paramet...
BL - Fyzika plasmatu a výboje v plynech
- 2006 •
- D
Rok uplatnění
D - Stať ve sborníku
Conductivity, impurity profile, and cytotoxicity of solvent-extracted polyaniline
Understanding the correlation between the preparation, purification, impurity of impurities leached out of the polymer into the solvents confirmed differences in impurity profiles, which depended on the polarity of...
CD - Makromolekulární chemie
- 2016 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Profiling of a GaAs structure using the probe method.
Determination of doping concentration profiles of GaAs on bevelled surface by the probe method is presented. The results are compared with electrochemical capacitance-voltage technique....
BM - Fyzika pevných látek a magnetismus
- 2002 •
- D
Rok uplatnění
D - Stať ve sborníku
SIMS studies of MOVPE GaN/InGaN scintilator nano-structures
. Optimization of the SIMS technique can improve our results. Measuring the impurity concentration profiles close to surface, we can estimate surface roughness, in our case the V-pits depth. We can measure impurity concentr...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2019 •
- O
Rok uplatnění
O - Ostatní výsledky
Intensity radial profiles of VUV line radiation near the solid target in a hot plasma
a spherical dispersion grating has been upgraded to monitor the radial profiles of the chord-integrated low-Z impurity line intenst....
BL - Fyzika plasmatu a výboje v plynech
- 2004 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Determination of carrier profiles on bevelled GaAs structures by PCIV method
Determination of free charge profiles of GaAs on a bevelled surface by PCIV is presented. The bevelled structure were prepared by chemical etching. The results are compared with the electrochemical capacitance-voltage technique....
BM - Fyzika pevných látek a magnetismus
- 2004 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
ICRH for Mitigation of Core Impurity Accumulation in JET-ILW(25thIAEA2014)
profiles (Te0>5keV) in typical JET H-mode plasmas for effective core impurityPředneseno na:25th IAEA Fusion Energy Conference,2014 The main results concerning the use of ICRH for core impurity mitigation in high power H-mo...
BL - Fyzika plasmatu a výboje v plynech
- 2014 •
- O
Rok uplatnění
O - Ostatní výsledky
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